SI3911DV-T1-E3
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SI3911DV-T1-E3
| Manufacturer | Electro-Films (EFI) / Vishay |
|---|---|
| Description | MOSFET 2P-CH 20V 1.8A 6TSOP |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
| Supplier Device Package | 6-TSOP |
| Series | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 145 mOhm @ 2.2A, 4.5V |
| Power - Max | 830mW |
| Packaging | Cut Tape (CT) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Other Names | SI3911DV-T1-E3CT |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 4.5V |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Detailed Description | Mosfet Array 2 P-Channel (Dual) 20V 1.8A 830mW Surface Mount 6-TSOP |
| Current - Continuous Drain (Id) @ 25°C | 1.8A |
| Base Part Number | SI3911 |
| RFQ | |
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Introduce of SI3911DV-T1-E3
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