SI3900DV-T1-E3
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SI3900DV-T1-E3
| Manufacturer | Vishay Siliconix |
|---|---|
| Description | MOSFET 2N-CH 20V 2A 6-TSOP |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Voltage - Test | - |
| Voltage - Breakdown | 6-TSOP |
| Vgs(th) (Max) @ Id | 125 mOhm @ 2.4A, 4.5V |
| Series | TrenchFET® |
| RoHS Status | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs | 2A |
| Power - Max | 830mW |
| Polarization | SOT-23-6 Thin, TSOT-23-6 |
| Other Names | SI3900DV-T1-E3TR SI3900DVT1E3 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 15 Weeks |
| Manufacturer Part Number | SI3900DV-T1-E3 |
| Input Capacitance (Ciss) (Max) @ Vds | 4nC @ 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1.5V @ 250µA |
| FET Feature | 2 N-Channel (Dual) |
| Expanded Description | Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP |
| Drain to Source Voltage (Vdss) | Logic Level Gate |
| Description | MOSFET 2N-CH 20V 2A 6-TSOP |
| Current - Continuous Drain (Id) @ 25°C | 20V |
| RFQ | |
Reference Price(In US Dollars)
- 5 pcs$0.224
- 50 pcs$0.184
- 150 pcs$0.167
- 500 pcs$0.146
- 3000 pcs$0.121
- 6000 pcs$0.116
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
Request Quote
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Introduce of SI3900DV-T1-E3
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