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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI3900DV-T1-GE3

SI3900DV-T1-GE3

SI3900DV-T1-GE3
Electro-Films (EFI) / Vishay

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SI3900DV-T1-GE3

ManufacturerElectro-Films (EFI) / Vishay
DescriptionMOSFET 2N-CH 20V 2A 6-TSOP
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Vgs(th) (Max) @ Id 1.5V @ 250µA
Supplier Device Package 6-TSOP
Series TrenchFET®
Rds On (Max) @ Id, Vgs 125 mOhm @ 2.4A, 4.5V
Power - Max 830mW
Packaging Tape & Reel (TR)
Package / Case SOT-23-6 Thin, TSOT-23-6
Other Names SI3900DV-T1-GE3TR
SI3900DVT1GE3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 33 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds -
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Detailed Description Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP
Current - Continuous Drain (Id) @ 25°C 2A
Base Part Number SI3900

SI3900DV

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Reference Price(In US Dollars)

In stock:145
  • 5 pcs$0.214
  • 50 pcs$0.175
  • 150 pcs$0.158
  • 500 pcs$0.137
  • 3000 pcs$0.121
  • 6000 pcs$0.116

The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer

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Introduce of SI3900DV-T1-GE3

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