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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > HGTP12N60A4

HGTP12N60A4

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HGTP12N60A4

ManufacturerAMI Semiconductor / ON Semiconductor
DescriptionIGBT 600V 54A 167W TO220AB
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 600V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 12A
Test Condition 390V, 12A, 10 Ohm, 15V
Td (on/off) @ 25°C 17ns/96ns
Switching Energy 55µJ (on), 50µJ (off)
Supplier Device Package TO-220AB
Series -
Power - Max 167W
Packaging Tube
Package / Case TO-220-3
Other Names HGTP12N60A4_NL
HGTP12N60A4_NL-ND
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Type Standard
IGBT Type -
Gate Charge 78nC
Detailed Description IGBT 600V 54A 167W Through Hole TO-220AB
Current - Collector Pulsed (Icm) 96A
Current - Collector (Ic) (Max) 54A
Base Part Number HGTP12N60

TO220B03 Pkg Drawing

HGT(P,G)12N60A4, HGT1S12N60A4S9A

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