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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > HGTP7N60A4-F102

HGTP7N60A4-F102

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HGTP7N60A4-F102

ManufacturerAMI Semiconductor / ON Semiconductor
DescriptionN-CH / 7A 600V SMPS 1 IGBT
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 600V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 7A
Test Condition 390V, 7A, 25 Ohm, 15V
Td (on/off) @ 25°C 11ns/100ns
Switching Energy 55µJ (on), 150µJ (off)
Supplier Device Package TO-220-3
Series -
Power - Max 125W
Package / Case TO-220-3
Other Names HGTP7N60A4_F102
HGTP7N60A4_F102-ND
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Type Standard
IGBT Type -
Gate Charge 60nC
Detailed Description IGBT 600V 34A 125W Through Hole TO-220-3
Current - Collector Pulsed (Icm) 56A
Current - Collector (Ic) (Max) 34A

HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4

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Reference Price(In US Dollars)

In stock:945
  • 1 pcs$1.654
  • 200 pcs$0.641
  • 500 pcs$0.619
  • 1000 pcs$0.608

The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer

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