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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > RN4910,LF

RN4910,LF

RN4910,LF
Toshiba Semiconductor and Storage

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RN4910,LF

ManufacturerToshiba Semiconductor and Storage
DescriptionTRANS NPN/PNP PREBIAS 0.2W US6
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package US6
Series -
Resistor - Emitter Base (R2) -
Resistor - Base (R1) 4.7 kOhms
Power - Max 200mW
Packaging Tape & Reel (TR)
Package / Case 6-TSSOP, SC-88, SOT-363
Other Names RN4910,LF(CB
RN4910,LF(CT
RN4910LF(CTTR
RN4910LF(CTTR-ND
RN4910LFTR
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 12 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 200MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 100mA

RN4910

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Reference Price(In US Dollars)

In stock:329645
  • 3000 pcs$0.059

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