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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > RN2601(TE85L,F)

RN2601(TE85L,F)

RN2601(TE85L,F)
Toshiba Semiconductor and Storage

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RN2601(TE85L,F)

ManufacturerToshiba Semiconductor and Storage
DescriptionTRANS 2PNP PREBIAS 0.3W SM6
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type 2 PNP - Pre-Biased (Dual)
Supplier Device Package SM6
Series -
Resistor - Emitter Base (R2) 4.7 kOhms
Resistor - Base (R1) 4.7 kOhms
Power - Max 300mW
Packaging Cut Tape (CT)
Package / Case SC-74, SOT-457
Other Names RN2601(TE85LF)CT
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 200MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 300mW Surface Mount SM6
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 100mA

RN2601-06

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Reference Price(In US Dollars)

In stock:71616
  • 1 pcs$0.678
  • 10 pcs$0.487
  • 25 pcs$0.378
  • 100 pcs$0.286
  • 250 pcs$0.203
  • 500 pcs$0.162
  • 1000 pcs$0.124

The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer

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