HGT1S7N60A4DS
HGT1S7N60A4DS
Manufacturer | AMI Semiconductor / ON Semiconductor |
---|---|
Description | IGBT 600V 34A 125W TO263AB |
Category | Discrete Semiconductor Products |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 7A |
Test Condition | 390V, 7A, 25 Ohm, 15V |
Td (on/off) @ 25°C | 11ns/100ns |
Switching Energy | 55µJ (on), 60µJ (off) |
Supplier Device Package | TO-263AB |
Series | - |
Reverse Recovery Time (trr) | 34ns |
Power - Max | 125W |
Packaging | Tube |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Type | Standard |
IGBT Type | - |
Gate Charge | 37nC |
Detailed Description | IGBT 600V 34A 125W Surface Mount TO-263AB |
Current - Collector Pulsed (Icm) | 56A |
Current - Collector (Ic) (Max) | 34A |
HGT(G,P)7N60A4D, HGT1S7N60A4DS RFQ |
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