HGTD3N60C3S9A
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HGTD3N60C3S9A
Manufacturer | AMI Semiconductor / ON Semiconductor |
---|---|
Description | IGBT 600V 6A 33W TO252AA |
Category | Discrete Semiconductor Products |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 3A |
Test Condition | 480V, 3A, 82 Ohm, 15V |
Td (on/off) @ 25°C | - |
Switching Energy | 85µJ (on), 245µJ (off) |
Supplier Device Package | TO-252AA |
Series | - |
Power - Max | 33W |
Packaging | Tape & Reel (TR) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Type | Standard |
IGBT Type | - |
Gate Charge | 10.8nC |
Detailed Description | IGBT 600V 6A 33W Surface Mount TO-252AA |
Current - Collector Pulsed (Icm) | 24A |
Current - Collector (Ic) (Max) | 6A |
RFQ |
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