HGTG10N120BND
HGTG10N120BND
Manufacturer | AMI Semiconductor / ON Semiconductor |
---|---|
Description | IGBT 1200V 35A 298W TO247 |
Category | Discrete Semiconductor Products |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A |
Test Condition | 960V, 10A, 10 Ohm, 15V |
Td (on/off) @ 25°C | 23ns/165ns |
Switching Energy | 850µJ (on), 800µJ (off) |
Supplier Device Package | TO-247 |
Series | - |
Reverse Recovery Time (trr) | 70ns |
Power - Max | 298W |
Packaging | Tube |
Package / Case | TO-247-3 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Type | Standard |
IGBT Type | NPT |
Gate Charge | 100nC |
Detailed Description | IGBT NPT 1200V 35A 298W Through Hole TO-247 |
Current - Collector Pulsed (Icm) | 80A |
Current - Collector (Ic) (Max) | 35A |
RFQ |
Reference Price(In US Dollars)
- 10 pcs$1.853
- 100 pcs$1.775
- 300 pcs$1.667
- 500 pcs$1.544
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
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Introduce of HGTG10N120BND
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