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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > HGT1S12N60A4DS

HGT1S12N60A4DS

HGT1S12N60A4DS
AMI Semiconductor / ON Semiconductor

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HGT1S12N60A4DS

ManufacturerAMI Semiconductor / ON Semiconductor
DescriptionIGBT 600V 54A 167W D2PAK
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 600V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 12A
Test Condition 390V, 12A, 10 Ohm, 15V
Td (on/off) @ 25°C 17ns/96ns
Switching Energy 55µJ (on), 50µJ (off)
Supplier Device Package TO-263AB
Series -
Reverse Recovery Time (trr) 30ns
Power - Max 167W
Packaging Tube
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Type Standard
IGBT Type -
Gate Charge 78nC
Detailed Description IGBT 600V 54A 167W Surface Mount TO-263AB
Current - Collector Pulsed (Icm) 96A
Current - Collector (Ic) (Max) 54A
Base Part Number HGT1S12N60

HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS

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Reference Price(In US Dollars)

In stock:945
  • 1 pcs$8.905
  • 200 pcs$3.446
  • 500 pcs$3.326
  • 1000 pcs$3.265

The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer

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Introduce of HGT1S12N60A4DS

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