NSVBC114EDXV6T1G
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NSVBC114EDXV6T1G
| Fabrikant | AMI Semiconductor / ON Semiconductor |
|---|---|
| Beskrivelse | TRANS 2NPN BIAS BIPOLAR SOT563 |
| Kategori | Diskrete halvlederprodukter |
| Blyfri Status / RoHS Status | Blyfri / RoHS-kompatibel |
| Spænding - Samler Emitter Opdeling (Max) | 50V |
| Vce Mætning (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Leverandør Device Package | SOT-563 |
| Serie | - |
| Modstand - Emitterbase (R2) | 10 kOhms |
| Modstand - Base (R1) | 10 kOhms |
| Strøm - Max | 500mW |
| Emballage | Tape & Reel (TR) |
| Pakke / tilfælde | SOT-563, SOT-666 |
| Monteringstype | Surface Mount |
| Fugtfølsomhedsniveau (MSL) | 1 (Unlimited) |
| Fabrikantens standard ledetid | 14 Weeks |
| Blyfri Status / RoHS Status | Lead free / RoHS Compliant |
| Frekvens - Overgang | - |
| Detaljeret beskrivelse | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563 |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
| Nuværende - Collector Cutoff (Max) | 500nA |
| Nuværende - Samler (Ic) (Max) | 100mA |
| RFQ | |
Referencepris (i amerikanske dollars)
- 4000 pcs$0.129
Ovenstående priser er eksklusive skatter og forsendelsesomkostninger. Den nøjagtige pris er underlagt det endelige tilbud
Anmodning Citat
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Indføre NSVBC114EDXV6T1G
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