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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > RN1904FE,LF(CT

RN1904FE,LF(CT

RN1904FE,LF(CT
Toshiba Semiconductor and Storage

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RN1904FE,LF(CT

ManufacturerToshiba Semiconductor and Storage
DescriptionTRANS 2NPN PREBIAS 0.1W ES6
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type 2 NPN - Pre-Biased (Dual)
Supplier Device Package ES6
Series -
Resistor - Emitter Base (R2) 47 kOhms
Resistor - Base (R1) 47 kOhms
Power - Max 100mW
Packaging Tape & Reel (TR)
Package / Case SOT-563, SOT-666
Other Names RN1904FE(T5L,F,T)
RN1904FE(T5LFT)TR
RN1904FE(T5LFT)TR-ND
RN1904FELF(CTTR
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 250MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 100mA

RN1901FE-06FE

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In stock:3645
  • 4000 pcs$0.076

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