RN1106MFV(TL3,T)
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RN1106MFV(TL3,T)
| Manufacturer | Toshiba Semiconductor and Storage |
|---|---|
| Description | TRANS PREBIAS NPN 0.15W VESM |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA |
| Transistor Type | NPN - Pre-Biased |
| Supplier Device Package | VESM |
| Series | - |
| Resistor - Emitter Base (R2) | 47 kOhms |
| Resistor - Base (R1) | 4.7 kOhms |
| Power - Max | 150mW |
| Packaging | Cut Tape (CT) |
| Package / Case | SOT-723 |
| Other Names | RN1106MFV(TL3T)CT |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Detailed Description | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Current - Collector Cutoff (Max) | 500nA |
| Current - Collector (Ic) (Max) | 100mA |
| RFQ | |
Reference Price(In US Dollars)
- 5 pcs$0.279
- 50 pcs$0.227
- 150 pcs$0.205
- 500 pcs$0.177
- 2500 pcs$0.165
- 5000 pcs$0.157
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
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Introduce of RN1106MFV(TL3,T)
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