RN1108ACT(TPL3)
RN1108ACT(TPL3)
Manufacturer | Toshiba Semiconductor and Storage |
---|---|
Description | TRANS PREBIAS NPN 0.1W CST3 |
Category | Discrete Semiconductor Products |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
Transistor Type | NPN - Pre-Biased |
Supplier Device Package | CST3 |
Series | - |
Resistor - Emitter Base (R2) | 47 kOhms |
Resistor - Base (R1) | 22 kOhms |
Power - Max | 100mW |
Packaging | Tape & Reel (TR) |
Package / Case | SC-101, SOT-883 |
Other Names | RN1108ACT(TPL3)TR |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Detailed Description | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 80mA 100mW Surface Mount CST3 |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Current - Collector Cutoff (Max) | 500nA |
Current - Collector (Ic) (Max) | 80mA |
RFQ |
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