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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > NSBC115TPDP6T5G

NSBC115TPDP6T5G

NSBC115TPDP6T5G
AMI Semiconductor / ON Semiconductor

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NSBC115TPDP6T5G

ManufacturerAMI Semiconductor / ON Semiconductor
DescriptionTRANS NPN/PNP PREBIAS SOT963
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package SOT-963
Series -
Resistor - Emitter Base (R2) -
Resistor - Base (R1) 100 kOhms
Power - Max 339mW
Packaging Tape & Reel (TR)
Package / Case SOT-963
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 14 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition -
Detailed Description Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 339mW Surface Mount SOT-963
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA
Base Part Number NSBC1*

NSBC114TPDP6

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In stock:129757
  • 8000 pcs$0.123

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