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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > NSBC123EF3T5G

NSBC123EF3T5G

NSBC123EF3T5G
AMI Semiconductor / ON Semiconductor

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NSBC123EF3T5G

ManufacturerAMI Semiconductor / ON Semiconductor
DescriptionTRANS PREBIAS DUAL NPN
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA
Transistor Type NPN - Pre-Biased
Supplier Device Package SOT-1123
Series -
Resistor - Emitter Base (R2) 2.2 kOhms
Resistor - Base (R1) 2.2 kOhms
Power - Max 254mW
Packaging Tape & Reel (TR)
Package / Case SOT-1123
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 16 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 254mW Surface Mount SOT-1123
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA

MUN(2,5)231, MMUN2231L, DC123Exx

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Reference Price(In US Dollars)

In stock:213922
  • 8000 pcs$0.111

The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer

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