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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIHD5N50D-GE3

SIHD5N50D-GE3

SIHD5N50D-GE3
Vishay / Siliconix

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SIHD5N50D-GE3

ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 500V 5.3A TO252 DPK
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Test 325pF @ 100V
Voltage - Breakdown TO-252AA
Vgs(th) (Max) @ Id 1.5 Ohm @ 2.5A, 10V
Technology MOSFET (Metal Oxide)
Series -
RoHS Status Tape & Reel (TR)
Rds On (Max) @ Id, Vgs 5.3A (Tc)
Polarization TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names SIHD5N50D-GE3TR
SIHD5N50DGE3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Part Number SIHD5N50D-GE3
Input Capacitance (Ciss) (Max) @ Vds 20nC @ 10V
Gate Charge (Qg) (Max) @ Vgs 5V @ 250µA
FET Feature N-Channel
Expanded Description N-Channel 500V 5.3A (Tc) 104W (Tc) Surface Mount TO-252AA
Drain to Source Voltage (Vdss) -
Description MOSFET N-CH 500V 5.3A TO252 DPK
Current - Continuous Drain (Id) @ 25°C 500V
Capacitance Ratio 104W (Tc)

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