RN2970FE(TE85L,F)
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RN2970FE(TE85L,F)
| Manufacturer | Toshiba Semiconductor and Storage |
|---|---|
| Description | TRANS 2PNP PREBIAS 0.1W ES6 |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Supplier Device Package | ES6 |
| Series | - |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Resistor - Base (R1) | 4.7 kOhms |
| Power - Max | 100mW |
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Other Names | RN2970FE(TE85LF)TR |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Frequency - Transition | 200MHz |
| Detailed Description | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6 |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Current - Collector (Ic) (Max) | 100mA |
| RFQ | |
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