EMD29T2R
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EMD29T2R
| Manufacturer | LAPIS Semiconductor |
|---|---|
| Description | TRANS NPN/PNP PREBIAS 0.12W EMT6 |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Voltage - Collector Emitter Breakdown (Max) | 50V, 12V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA / 300mV @ 5mA, 100mA |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Supplier Device Package | EMT6 |
| Series | - |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Resistor - Base (R1) | 1 kOhms, 10 kOhms |
| Power - Max | 120mW |
| Packaging | Original-Reel® |
| Package / Case | SOT-563, SOT-666 |
| Other Names | EMD29T2RDKR |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 10 Weeks |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Frequency - Transition | 250MHz, 260MHz |
| Detailed Description | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V, 12V 100mA, 500mA 250MHz, 260MHz 120mW Surface Mount EMT6 |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V / 140 @ 100mA, 2V |
| Current - Collector Cutoff (Max) | 500nA |
| Current - Collector (Ic) (Max) | 100mA, 500mA |
| Base Part Number | *MD29 |
| RFQ | |
Reference Price(In US Dollars)
- 10 pcs$0.039
- 100 pcs$0.035
- 300 pcs$0.034
- 1000 pcs$0.033
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
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Introduce of EMD29T2R
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