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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > EMD22FHAT2R

EMD22FHAT2R

EMD22FHAT2R
LAPIS Semiconductor

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EMD22FHAT2R

ManufacturerLAPIS Semiconductor
DescriptionPNP+NPN DIGITAL TRANSISTOR (CORR
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) -
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package EMT6
Series Automotive, AEC-Q101
Resistor - Emitter Base (R2) 47 kOhms
Resistor - Base (R1) 4.7 kOhms
Power - Max 150mW
Packaging Cut Tape (CT)
Package / Case SOT-563, SOT-666
Other Names EMD22FHAT2RCT
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 7 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 250MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 250MHz 150mW Surface Mount EMT6
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Current - Collector Cutoff (Max) -
Current - Collector (Ic) (Max) 100mA

EMT6 T2R Taping Spec

EMD22FHA

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Reference Price(In US Dollars)

In stock:7645
  • 10 pcs$0.039
  • 100 pcs$0.035
  • 300 pcs$0.034
  • 1000 pcs$0.033

The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer

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