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Home > Products > Integrated Circuits (ICs) > Memory > MB85R256FPFCN-G-BNDE1

MB85R256FPFCN-G-BNDE1

MB85R256FPFCN-G-BNDE1
Fujitsu Electronics America, Inc.

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MB85R256FPFCN-G-BNDE1

ManufacturerFujitsu Electronics America, Inc.
DescriptionIC FRAM 256K PARALLEL 28TSOP I
CategoryIntegrated Circuits (ICs)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Write Cycle Time - Word, Page 150ns
Voltage - Supply 2.7 V ~ 3.6 V
Technology FRAM (Ferroelectric RAM)
Supplier Device Package 28-TSOP I
Series -
Packaging Tray
Package / Case 28-TSSOP (0.465", 11.80mm Width)
Other Names 865-1170
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Memory Type Non-Volatile
Memory Size 256Kb (32K x 8)
Memory Interface Parallel
Memory Format FRAM
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Detailed Description FRAM (Ferroelectric RAM) Memory IC 256Kb (32K x 8) Parallel 150ns 28-TSOP I
Access Time 150ns

MB85R256F

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In stock:2513
  • 500 pcs$5.15

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