MB85R256FPF-G-BND-ERE1
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MB85R256FPF-G-BND-ERE1
| Manufacturer | Fujitsu Electronics America, Inc. |
|---|---|
| Description | IC FRAM 256K PARALLEL 28SOP |
| Category | Integrated Circuits (ICs) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Write Cycle Time - Word, Page | 150ns |
| Voltage - Supply | 2.7 V ~ 3.6 V |
| Technology | FRAM (Ferroelectric RAM) |
| Supplier Device Package | 28-SOP |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Package / Case | 28-SOIC (0.295", 7.50mm Width) |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Memory Type | Non-Volatile |
| Memory Size | 256Kb (32K x 8) |
| Memory Interface | Parallel |
| Memory Format | FRAM |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Detailed Description | FRAM (Ferroelectric RAM) Memory IC 256Kb (32K x 8) Parallel 150ns 28-SOP |
| Access Time | 150ns |
| RFQ | |
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