SI3499DV-T1-GE3
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SI3499DV-T1-GE3
| Manufacturer | Electro-Films (EFI) / Vishay |
|---|---|
| Description | MOSFET P-CH 8V 5.3A 6-TSOP |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 750mV @ 250µA |
| Vgs (Max) | ±5V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | 6-TSOP |
| Series | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 23 mOhm @ 7A, 4.5V |
| Power Dissipation (Max) | 1.1W (Ta) |
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Other Names | SI3499DV-T1-GE3-ND SI3499DV-T1-GE3TR SI3499DVT1GE3 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 33 Weeks |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Gate Charge (Qg) (Max) @ Vgs | 42nC @ 4.5V |
| FET Type | P-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Drain to Source Voltage (Vdss) | 8V |
| Detailed Description | P-Channel 8V 5.3A (Ta) 1.1W (Ta) Surface Mount 6-TSOP |
| Current - Continuous Drain (Id) @ 25°C | 5.3A (Ta) |
| RFQ | |
Reference Price(In US Dollars)
- 1 pcs$0.505
- 200 pcs$0.196
- 500 pcs$0.188
- 1000 pcs$0.185
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
Request Quote
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Introduce of SI3499DV-T1-GE3
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