EPC2103ENG
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EPC2103ENG
| Manufacturer | EPC |
|---|---|
| Description | TRANS GAN 2N-CH 80V BUMPED DIE |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 2.5V @ 7mA |
| Supplier Device Package | Die |
| Series | eGaN® |
| Rds On (Max) @ Id, Vgs | 5.5 mOhm @ 20A, 5V |
| Power - Max | - |
| Packaging | Tray |
| Package / Case | Die |
| Other Names | 917-EPC2103ENG EPC2103ENGRH7 |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 760pF @ 40V |
| Gate Charge (Qg) (Max) @ Vgs | 6.5nC @ 5V |
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 80V |
| Detailed Description | Mosfet Array 2 N-Channel (Half Bridge) 80V 23A Surface Mount Die |
| Current - Continuous Drain (Id) @ 25°C | 23A |
| RFQ | |
Reference Price(In US Dollars)
- 100 pcs$13.038
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
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Introduce of EPC2103ENG
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