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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > EPC2100ENG

EPC2100ENG

EPC2100ENG
EPC

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EPC2100ENG

ManufacturerEPC
DescriptionTRANS GAN 2N-CH 30V BUMPED DIE
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Vgs(th) (Max) @ Id 2.5V @ 4mA, 2.5V @ 16mA
Supplier Device Package Die
Series eGaN®
Rds On (Max) @ Id, Vgs 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V
Power - Max -
Packaging Tray
Package / Case Die
Other Names 917-EPC2100ENG
EPC2100ENGR_H1
EPC2100ENGRH1
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 475pF @ 15V, 1960pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 4.9nC @ 15V, 19nC @ 15V
FET Type 2 N-Channel (Half Bridge)
FET Feature GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 30V
Detailed Description Mosfet Array 2 N-Channel (Half Bridge) 30V 10A (Ta), 40A (Ta) Surface Mount Die
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 40A (Ta)

EPC2100 Datasheet

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Reference Price(In US Dollars)

In stock:2168
  • 10 pcs$11.431
  • 30 pcs$10.414
  • 100 pcs$9.398
  • 250 pcs$8.636
  • 500 pcs$7.874

The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer

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