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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NTD4810N-1G

NTD4810N-1G

NTD4810N-1G
AMI Semiconductor / ON Semiconductor

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NTD4810N-1G

ManufacturerAMI Semiconductor / ON Semiconductor
DescriptionMOSFET N-CH 30V 8.6A IPAK
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Vgs(th) (Max) @ Id 2.5V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package I-PAK
Series -
Rds On (Max) @ Id, Vgs 10 mOhm @ 30A, 10V
Power Dissipation (Max) 1.4W (Ta), 50W (Tc)
Packaging Tube
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 12V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V
Drain to Source Voltage (Vdss) 30V
Detailed Description N-Channel 30V 9A (Ta), 54A (Tc) 1.4W (Ta), 50W (Tc) Through Hole I-PAK
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 54A (Tc)

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