NTD4809NH-1G
NTD4809NH-1G
Manufacturer | AMI Semiconductor / ON Semiconductor |
---|---|
Description | MOSFET N-CH 30V 9A IPAK |
Category | Discrete Semiconductor Products |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | I-PAK |
Series | - |
Rds On (Max) @ Id, Vgs | 9 mOhm @ 30A, 10V |
Power Dissipation (Max) | 1.3W (Ta), 52W (Tc) |
Packaging | Tube |
Package / Case | TO-251-3 Stub Leads, IPak |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 2155pF @ 12V |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 4.5V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
Drain to Source Voltage (Vdss) | 30V |
Detailed Description | N-Channel 30V 9.6A (Ta), 58A (Tc) 1.3W (Ta), 52W (Tc) Through Hole I-PAK |
Current - Continuous Drain (Id) @ 25°C | 9.6A (Ta), 58A (Tc) |
RFQ |
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