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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > NSVMUN5332DW1T3G

NSVMUN5332DW1T3G

NSVMUN5332DW1T3G
AMI Semiconductor / ON Semiconductor

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NSVMUN5332DW1T3G

ManufacturerAMI Semiconductor / ON Semiconductor
DescriptionTRANS PREBIAS NPN/PNP 50V SC88
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package SC-88/SC70-6/SOT-363
Series Automotive, AEC-Q101
Resistor - Emitter Base (R2) 4.7 kOhms
Resistor - Base (R1) 4.7 kOhms
Power - Max 385mW
Packaging Tape & Reel (TR)
Package / Case 6-TSSOP, SC-88, SOT-363
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 40 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition -
Detailed Description Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 385mW Surface Mount SC-88/SC70-6/SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA

MUN5332DW1, NSBC143EPDxx

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Reference Price(In US Dollars)

In stock:91806
  • 10000 pcs$0.10

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