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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > NSVMUN531335DW1T1G

NSVMUN531335DW1T1G

NSVMUN531335DW1T1G
AMI Semiconductor / ON Semiconductor

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NSVMUN531335DW1T1G

ManufacturerAMI Semiconductor / ON Semiconductor
DescriptionTRANS PREBIAS NPN/PNP 50V 6TSSOP
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Transistor Type 1 NPN Pre-Biased, 1 PNP
Supplier Device Package SC-88/SC70-6/SOT-363
Series Automotive, AEC-Q101
Resistor - Emitter Base (R2) 47 kOhms
Resistor - Base (R1) 47 kOhms, 2.2 kOhms
Power - Max 187mW
Packaging Original-Reel®
Package / Case 6-TSSOP, SC-88, SOT-363
Other Names NSVMUN531335DW1T1GOSDKR
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 40 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition -
Detailed Description Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA

MUN531335DW1

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In stock:2105
  • 1 pcs$0.123
  • 200 pcs$0.048
  • 500 pcs$0.046
  • 1000 pcs$0.045

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