NSBC123EPDXV6T1G
NSBC123EPDXV6T1G
Manufacturer | AMI Semiconductor / ON Semiconductor |
---|---|
Description | TRANS PREBIAS NPN/PNP SOT563 |
Category | Discrete Semiconductor Products |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Supplier Device Package | SOT-563 |
Series | - |
Resistor - Emitter Base (R2) | 2.2 kOhms |
Resistor - Base (R1) | 2.2 kOhms |
Power - Max | 500mW |
Packaging | Tape & Reel (TR) |
Package / Case | SOT-563, SOT-666 |
Other Names | NSBC123EPDXV6T1GOS |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Frequency - Transition | - |
Detailed Description | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563 |
DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 5mA, 10V |
Current - Collector Cutoff (Max) | 500nA |
Current - Collector (Ic) (Max) | 100mA |
Base Part Number | NSBC1* |
RFQ |
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