NSBC115EPDXV6T1G
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NSBC115EPDXV6T1G
Manufacturer | AMI Semiconductor / ON Semiconductor |
---|---|
Description | SS SOT563 RSTR XSTR TR |
Category | Discrete Semiconductor Products |
Lead Free Status / RoHS Status | |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Supplier Device Package | SOT-563 |
Series | Automotive, AEC-Q101 |
Resistor - Emitter Base (R2) | 100 kOhms |
Resistor - Base (R1) | 100 kOhms |
Power - Max | 357mW |
Package / Case | SOT-563, SOT-666 |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 52 Weeks |
Frequency - Transition | - |
Detailed Description | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 357mW Surface Mount SOT-563 |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Current - Collector Cutoff (Max) | 500nA |
Current - Collector (Ic) (Max) | 100mA |
RFQ |
Reference Price(In US Dollars)
- 8000 pcs$0.084
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
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Introduce of NSBC115EPDXV6T1G
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