HGTP2N120CN
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HGTP2N120CN
| Manufacturer | AMI Semiconductor / ON Semiconductor |
|---|---|
| Description | IGBT 1200V 13A 104W TO220AB |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 2.6A |
| Test Condition | 960V, 2.6A, 51 Ohm, 15V |
| Td (on/off) @ 25°C | 25ns/205ns |
| Switching Energy | 96µJ (on), 355µJ (off) |
| Supplier Device Package | TO-220AB |
| Series | - |
| Power - Max | 104W |
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Type | Standard |
| IGBT Type | NPT |
| Gate Charge | 30nC |
| Detailed Description | IGBT NPT 1200V 13A 104W Through Hole TO-220AB |
| Current - Collector Pulsed (Icm) | 20A |
| Current - Collector (Ic) (Max) | 13A |
| RFQ | |
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Introduce of HGTP2N120CN
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