HGTP10N120BN
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HGTP10N120BN
| Manufacturer | AMI Semiconductor / ON Semiconductor |
|---|---|
| Description | IGBT 1200V 35A 298W TO220AB |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A |
| Test Condition | 960V, 10A, 10 Ohm, 15V |
| Td (on/off) @ 25°C | 23ns/165ns |
| Switching Energy | 320µJ (on), 800µJ (off) |
| Supplier Device Package | TO-220AB |
| Series | - |
| Power - Max | 298W |
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Other Names | HGTP10N120BN-ND HGTP10N120BNFS |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Type | Standard |
| IGBT Type | NPT |
| Gate Charge | 100nC |
| Detailed Description | IGBT NPT 1200V 35A 298W Through Hole TO-220AB |
| Current - Collector Pulsed (Icm) | 80A |
| Current - Collector (Ic) (Max) | 35A |
|
HGT(G,P)10N120BN, HGT1S10N120BNS RFQ |
|
Reference Price(In US Dollars)
- 1 pcs$6.333
- 10 pcs$5.676
- 30 pcs$5.276
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
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