RN1109(T5L,F,T)
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RN1109(T5L,F,T)
| Manufacturer | Toshiba Semiconductor and Storage |
|---|---|
| Description | TRANS PREBIAS NPN 0.1W SSM |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Transistor Type | NPN - Pre-Biased |
| Supplier Device Package | SSM |
| Series | - |
| Resistor - Emitter Base (R2) | 22 kOhms |
| Resistor - Base (R1) | 47 kOhms |
| Power - Max | 100mW |
| Packaging | Cut Tape (CT) |
| Package / Case | SC-75, SOT-416 |
| Other Names | RN1109(T5LFT)CT |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Frequency - Transition | 250MHz |
| Detailed Description | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 100mW Surface Mount SSM |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
| Current - Collector Cutoff (Max) | 500nA |
| Current - Collector (Ic) (Max) | 100mA |
| RFQ | |
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