TSM60NB190CM2 RNG
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TSM60NB190CM2 RNG
| Manufacturer | TSC (Taiwan Semiconductor) |
|---|---|
| Description | MOSFET N-CH 600V 18A TO263 |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-263 (D²Pak) |
| Series | - |
| Rds On (Max) @ Id, Vgs | 190 mOhm @ 6A, 10V |
| Power Dissipation (Max) | 150.6W (Tc) |
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Other Names | TSM60NB190CM2 RNGTR TSM60NB190CM2 RNGTR-ND TSM60NB190CM2RNGTR |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 14 Weeks |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 1273pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 600V |
| Detailed Description | N-Channel 600V 18A (Tc) 150.6W (Tc) Surface Mount TO-263 (D²Pak) |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| RFQ | |
Reference Price(In US Dollars)
- 800 pcs$1.994
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
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Introduce of TSM60NB190CM2 RNG
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