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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TSM60NB041PW C1G

TSM60NB041PW C1G

TSM60NB041PW C1G
TSC (Taiwan Semiconductor)

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TSM60NB041PW C1G

ManufacturerTSC (Taiwan Semiconductor)
DescriptionMOSFET N-CHANNEL 600V 78A TO247
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-247
Series -
Rds On (Max) @ Id, Vgs 41 mOhm @ 21.7A, 10V
Power Dissipation (Max) 446W (Tc)
Package / Case TO-247-3
Other Names TSM60NB041PW C1G-ND
TSM60NB041PWC1G
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 14 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 6120pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 139nC @ 10V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V
Detailed Description N-Channel 600V 78A (Tc) 446W (Tc) Through Hole TO-247
Current - Continuous Drain (Id) @ 25°C 78A (Tc)

TSM60NB041PW

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Reference Price(In US Dollars)

In stock:2162
  • 1 pcs$15.945
  • 10 pcs$14.491
  • 100 pcs$12.317

The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer

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