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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > SG2013J-883B

SG2013J-883B

SG2013J-883B
Microsemi

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SG2013J-883B

ManufacturerMicrosemi
DescriptionTRANS 7NPN DARL 50V 0.6A 16JDIP
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 1.9V @ 600µA, 500mA
Transistor Type 7 NPN Darlington
Supplier Device Package 16-CDIP
Series -
Power - Max -
Packaging Tube
Package / Case -
Other Names 1259-1108
1259-1108-MIL
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Frequency - Transition -
Detailed Description Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 600mA Through Hole 16-CDIP
DC Current Gain (hFE) (Min) @ Ic, Vce 900 @ 500mA, 2V
Current - Collector Cutoff (Max) -
Current - Collector (Ic) (Max) 600mA

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In stock:257
  • 1 pcs$88.238

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