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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > SG2003J-883B

SG2003J-883B

SG2003J-883B
Microsemi

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SG2003J-883B

ManufacturerMicrosemi
DescriptionTRANS 7NPN DARL 50V 0.5A 16DIP
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 500µA, 350mA
Transistor Type 7 NPN Darlington
Supplier Device Package 16-CDIP
Series -
Power - Max -
Packaging Tube
Package / Case 16-CDIP (0.300", 7.62mm)
Other Names 1259-1081
1259-1081-MIL
Q10386303
SG2003J883B
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition -
Detailed Description Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Through Hole 16-CDIP
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 350mA, 2V
Current - Collector Cutoff (Max) -
Current - Collector (Ic) (Max) 500mA

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