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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > APT35GP120B2DQ2G

APT35GP120B2DQ2G

APT35GP120B2DQ2G
Microsemi

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APT35GP120B2DQ2G

ManufacturerMicrosemi
DescriptionIGBT 1200V 96A 543W TMAX
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 35A
Test Condition 600V, 35A, 4.3 Ohm, 15V
Td (on/off) @ 25°C 16ns/95ns
Switching Energy 750µJ (on), 680µJ (off)
Series POWER MOS 7®
Power - Max 543W
Packaging Tube
Package / Case TO-247-3 Variant
Other Names APT35GP120B2DQ2GMI
APT35GP120B2DQ2GMI-ND
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 32 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Type Standard
IGBT Type PT
Gate Charge 150nC
Detailed Description IGBT PT 1200V 96A 543W Through Hole
Current - Collector Pulsed (Icm) 140A
Current - Collector (Ic) (Max) 96A

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APT35GP120B2DQ2(G)

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Reference Price(In US Dollars)

In stock:864
  • 1 pcs$25.273
  • 10 pcs$22.977
  • 30 pcs$21.253
  • 120 pcs$19.53
  • 270 pcs$17.807

The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer

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