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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > APT34N80B2C3G

APT34N80B2C3G

APT34N80B2C3G
Microsemi

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APT34N80B2C3G

ManufacturerMicrosemi
DescriptionMOSFET N-CH 800V 34A T-MAX
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Vgs(th) (Max) @ Id 3.9V @ 2mA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package T-MAX™ [B2]
Series -
Rds On (Max) @ Id, Vgs 145 mOhm @ 22A, 10V
Power Dissipation (Max) 417W (Tc)
Packaging Tube
Package / Case TO-247-3 Variant
Other Names APT34N80B2C3GMI
APT34N80B2C3GMI-ND
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 12 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 4510pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 355nC @ 10V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 800V
Detailed Description N-Channel 800V 34A (Tc) 417W (Tc) Through Hole T-MAX™ [B2]
Current - Continuous Drain (Id) @ 25°C 34A (Tc)

Power Products Catalog

APT34N80(B2,L)C3

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Reference Price(In US Dollars)

In stock:1597
  • 1 pcs$10.942
  • 200 pcs$4.235
  • 500 pcs$4.085
  • 1000 pcs$4.013

The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer

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