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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > BSM180D12P3C007

BSM180D12P3C007

BSM180D12P3C007
LAPIS Semiconductor

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BSM180D12P3C007

ManufacturerLAPIS Semiconductor
DescriptionSIC POWER MODULE
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Vgs(th) (Max) @ Id 5.6V @ 50mA
Supplier Device Package Module
Series -
Rds On (Max) @ Id, Vgs -
Power - Max 880W
Packaging Bulk
Package / Case Module
Other Names Q9597863
Operating Temperature 175°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 32 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 10V
Gate Charge (Qg) (Max) @ Vgs -
FET Type 2 N-Channel (Dual)
FET Feature Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Detailed Description Mosfet Array 2 N-Channel (Dual) 1200V (1.2kV) 180A (Tc) 880W Surface Mount Module
Current - Continuous Drain (Id) @ 25°C 180A (Tc)

C Type Taping Spec

BSM180D12P3C007

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Reference Price(In US Dollars)

In stock:23
  • 1 pcs$594.415

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