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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > BSM180D12P2C101

BSM180D12P2C101

BSM180D12P2C101
LAPIS Semiconductor

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BSM180D12P2C101

ManufacturerLAPIS Semiconductor
DescriptionMOSFET 2N-CH 1200V 180A MODULE
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Vgs(th) (Max) @ Id 4V @ 35.2mA
Supplier Device Package Module
Series -
Rds On (Max) @ Id, Vgs -
Power - Max 1130W
Packaging Bulk
Package / Case Module
Operating Temperature -40°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 32 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 23000pF @ 10V
Gate Charge (Qg) (Max) @ Vgs -
FET Type 2 N-Channel (Half Bridge)
FET Feature Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Detailed Description Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 204A (Tc) 1130W Module
Current - Continuous Drain (Id) @ 25°C 204A (Tc)

C Type Taping Spec

BSM180D12P2C101 Datasheet

BSM180D12P2C101 Spec

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Reference Price(In US Dollars)

In stock:30
  • 1 pcs$507.087
  • 10 pcs$488.307

The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer

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