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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIE860DF-T1-E3

SIE860DF-T1-E3

SIE860DF-T1-E3
Electro-Films (EFI) / Vishay

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SIE860DF-T1-E3

ManufacturerElectro-Films (EFI) / Vishay
DescriptionMOSFET N-CH 30V 60A POLARPAK
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Vgs(th) (Max) @ Id 2.5V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package 10-PolarPAK® (M)
Series TrenchFET®
Rds On (Max) @ Id, Vgs 2.1 mOhm @ 21.7A, 10V
Power Dissipation (Max) 5.2W (Ta), 104W (Tc)
Packaging Tape & Reel (TR)
Package / Case 10-PolarPAK® (M)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 105nC @ 10V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 30V
Detailed Description N-Channel 30V 60A (Tc) 5.2W (Ta), 104W (Tc) Surface Mount 10-PolarPAK® (M)
Current - Continuous Drain (Id) @ 25°C 60A (Tc)

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