SIE836DF-T1-GE3
SIE836DF-T1-GE3
Manufacturer | Electro-Films (EFI) / Vishay |
---|---|
Description | MOSFET N-CH 200V 18.3A POLARPAK |
Category | Discrete Semiconductor Products |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | 10-PolarPAK® (SH) |
Series | TrenchFET® |
Rds On (Max) @ Id, Vgs | 130 mOhm @ 4.1A, 10V |
Power Dissipation (Max) | 5.2W (Ta), 104W (Tc) |
Packaging | Tape & Reel (TR) |
Package / Case | 10-PolarPAK® (SH) |
Other Names | SIE836DF-T1-GE3TR SIE836DFT1GE3 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 200V |
Detailed Description | N-Channel 200V 18.3A (Tc) 5.2W (Ta), 104W (Tc) Surface Mount 10-PolarPAK® (SH) |
Current - Continuous Drain (Id) @ 25°C | 18.3A (Tc) |
RFQ |
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