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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI5406CDC-T1-GE3

SI5406CDC-T1-GE3

SI5406CDC-T1-GE3
Electro-Films (EFI) / Vishay

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SI5406CDC-T1-GE3

ManufacturerElectro-Films (EFI) / Vishay
DescriptionMOSFET N-CH 12V 6A 1206-8
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Vgs(th) (Max) @ Id 1V @ 250µA
Vgs (Max) ±8V
Technology MOSFET (Metal Oxide)
Supplier Device Package 1206-8 ChipFET™
Series TrenchFET®
Rds On (Max) @ Id, Vgs 20 mOhm @ 6.5A, 4.5V
Power Dissipation (Max) 2.3W (Ta), 5.7W (Tc)
Packaging Tape & Reel (TR)
Package / Case 8-SMD, Flat Lead
Other Names SI5406CDC-T1-GE3TR
SI5406CDC-T1-GE3TR-N
SI5406CDCT1GE3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 6V
Gate Charge (Qg) (Max) @ Vgs 32nC @ 8V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Drain to Source Voltage (Vdss) 12V
Detailed Description N-Channel 12V 6A (Tc) 2.3W (Ta), 5.7W (Tc) Surface Mount 1206-8 ChipFET™
Current - Continuous Drain (Id) @ 25°C 6A (Tc)

SI5406CDC

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In stock:378
  • 3000 pcs$0.386

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