SI5401DC-T1-E3
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SI5401DC-T1-E3
| Manufacturer | Electro-Films (EFI) / Vishay |
|---|---|
| Description | MOSFET P-CH 20V 5.2A 1206-8 |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | 1206-8 ChipFET™ |
| Series | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 32 mOhm @ 5.2A, 4.5V |
| Power Dissipation (Max) | 1.3W (Ta) |
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Lead |
| Other Names | SI5401DC-T1-E3TR |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 4.5V |
| FET Type | P-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Detailed Description | P-Channel 20V 5.2A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™ |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Ta) |
| RFQ | |
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