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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI4845DY-T1-E3

SI4845DY-T1-E3

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SI4845DY-T1-E3

ManufacturerElectro-Films (EFI) / Vishay
DescriptionMOSFET P-CH 20V 2.7A 8-SOIC
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Vgs(th) (Max) @ Id 1.5V @ 250µA
Vgs (Max) ±12V
Technology MOSFET (Metal Oxide)
Supplier Device Package 8-SO
Series LITTLE FOOT®
Rds On (Max) @ Id, Vgs 210 mOhm @ 2A, 4.5V
Power Dissipation (Max) 1.75W (Ta), 2.75W (Tc)
Packaging Tape & Reel (TR)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Other Names SI4845DY-T1-E3TR
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 312pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 4.5V
FET Type P-Channel
FET Feature Schottky Diode (Isolated)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Drain to Source Voltage (Vdss) 20V
Detailed Description P-Channel 20V 2.7A (Tc) 1.75W (Ta), 2.75W (Tc) Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C 2.7A (Tc)

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