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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI4842BDY-T1-GE3

SI4842BDY-T1-GE3

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SI4842BDY-T1-GE3

ManufacturerElectro-Films (EFI) / Vishay
DescriptionMOSFET N-CH 30V 28A 8-SOIC
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Vgs(th) (Max) @ Id 3V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package 8-SO
Series TrenchFET®
Rds On (Max) @ Id, Vgs 4.2 mOhm @ 20A, 10V
Power Dissipation (Max) 3W (Ta), 6.25W (Tc)
Packaging Tape & Reel (TR)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Other Names SI4842BDY-T1-GE3TR
SI4842BDYT1GE3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 27 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 3650pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 30V
Detailed Description N-Channel 30V 28A (Tc) 3W (Ta), 6.25W (Tc) Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C 28A (Tc)

SI4842BDY

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In stock:19011
  • 2500 pcs$1.172

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