SI3493DDV-T1-GE3
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SI3493DDV-T1-GE3
| Manufacturer | Electro-Films (EFI) / Vishay |
|---|---|
| Description | MOSFET P-CHANNEL 20V 8A 6TSOP |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | 6-TSOP |
| Series | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 24 mOhm @ 7.5A, 4.5V |
| Power Dissipation (Max) | 3.6W (Tc) |
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Other Names | SI3493DDV-T1-GE3TR |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 1825pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 4.5V |
| FET Type | P-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Detailed Description | P-Channel 20V 8A (Tc) 3.6W (Tc) Surface Mount 6-TSOP |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| RFQ | |
Reference Price(In US Dollars)
- 1 pcs$0.81
- 10 pcs$0.65
- 30 pcs$0.54
- 100 pcs$0.499
- 500 pcs$0.48
- 1000 pcs$0.472
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
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Introduce of SI3493DDV-T1-GE3
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